Single N-Channel Power MOSFET featuring 30V drain-source voltage and 69A continuous drain current. Offers low 4mΩ maximum drain-source on-resistance and 3.2mΩ typical resistance. Operates with a 2.1V threshold voltage and 20V gate-source voltage, with fast switching times including 3ns fall time. Packaged in a 5x6 DFN with a height of 1.05mm, this RoHS compliant component is supplied on a 1500-piece tape and reel.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTMFS4C06NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 69A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 1.683nF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30.5W |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 8ns |
| Width | 5.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4C06NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4C06NT1G to view detailed technical specifications.
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