The NTMFS4C09NT1G is an N-channel junction field-effect transistor with a maximum drain current of 52A and a maximum drain-to-source voltage of 30V. It has a maximum power dissipation of 25.5W and is packaged in a lead-free DFN package. The transistor has an input capacitance of 1.252nF and a threshold voltage of 2.1V. It is RoHS compliant and has a turn-on delay time of 10ns and a turn-off delay time of 20ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTMFS4C09NT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTMFS4C09NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 1.252nF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Power Dissipation | 25.5W |
| Packaging | Tape and Reel |
| Rds On Max | 5.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Width | 5.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS4C09NT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
