Single N-Channel Power MOSFET featuring 30V drain-source voltage and 46A continuous drain current. Offers low on-resistance of 5.8mΩ (typical) and 6.95mΩ (max) at 10Vgs. Designed with a DFN 5x6 package, 1.05mm height, and 1.27mm pitch, suitable for tape and reel packaging. Key electrical characteristics include a 2.2V threshold voltage and 987pF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 23.6W.
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Onsemi NTMFS4C10NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 987pF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23.6W |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 6.95mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9ns |
| Width | 5.1mm |
| RoHS | Compliant |
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