The NTMFS4C13NT1G is an N-channel junction field-effect transistor from Onsemi. It features a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 750mW. The device has a continuous drain current rating of 38A and a drain to source resistance of 9.1mR. It is packaged in a lead-free DFN package and is RoHS compliant.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTMFS4C13NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Resistance | 9.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4C13NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4C13NT1G to view detailed technical specifications.
No datasheet is available for this part.