The NTMFS4C35NT1G is a single N-channel JFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 780mW and is packaged in a DFN package. The device is lead free and halogen free, and is RoHS compliant. It has an input capacitance of 2.3nF and a drain to source resistance of 3.2mR.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTMFS4C35NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 12.4A |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780mW |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4C35NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4C35NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.