The NTMFS4H02NT1G is a surface mount N-channel MOSFET with a maximum drain to source voltage of 25V and continuous drain current of 193A. It features a maximum power dissipation of 83W and an on-resistance of 1.4 milliohms. The device is packaged in a lead-free DFN package and is compliant with RoHS regulations. It is suitable for high-power applications and is available in quantities of 1500 per reel.
Onsemi NTMFS4H02NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 193A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 2.651nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Rds On Max | 1.4mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
