Single N-Channel Power MOSFET featuring 40V Drain to Source Breakdown Voltage and 6.5mΩ maximum Drain-source On Resistance. This MOSFET offers a continuous drain current of 20A and a maximum power dissipation of 3.1W. Key electrical characteristics include a 1V threshold voltage and 2.7nF input capacitance. The component is housed in a DFN 5x6 package with a 1.27mm pitch, operating from -55°C to 150°C, and is RoHS compliant.
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Onsemi NTMFS5832NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 6.5MR |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 13ns |
| Width | 6.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
