
Single N-Channel Power MOSFET featuring 60V Drain-to-Source Voltage (Vdss) and 4.7mΩ Drain-to-Source Resistance (Rds On Max). This surface-mount device offers a continuous drain current of 19A and a maximum power dissipation of 66W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a turn-on delay of 10.4ns and a fall time of 5.1ns. The component is housed in a compact DFN 5x6 package, with dimensions of 5.1mm width, 6.1mm length, and 1.05mm height, supplied on a 1500-piece tape and reel.
Onsemi NTMFS5C646NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Resistance | 4.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 2.164nF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 23.6ns |
| Turn-On Delay Time | 10.4ns |
| Width | 5.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS5C646NLT1G to view detailed technical specifications.
No datasheet is available for this part.
