This single N-channel power MOSFET is rated for 100 V drain-to-source voltage and up to 116 A continuous drain current at case temperature. It uses a dual-sided cooled DFN8 5x6.15 package and provides maximum drain-source on-resistance of 4.3 mΩ at 10 V gate drive and 12 mΩ at 6 V gate drive. The device supports junction temperatures from -55°C to 175°C and is specified for up to 122 W power dissipation at case temperature. It is intended for ORing FET and load switching, synchronous rectifier, and DC-DC conversion applications. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NTMFSC4D2N10MC technical specifications.
| Channel Type | N-Channel |
| Technology | MOSFET |
| Drain-to-Source Voltage | 100V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc) | 116A |
| Continuous Drain Current (Ta) | 29.6A |
| Power Dissipation (Tc) | 122W |
| Power Dissipation (Ta) | 7.9W |
| Drain-to-Source On Resistance @ Vgs=10V | 4.3 maxmΩ |
| Drain-to-Source On Resistance @ Vgs=6V | 12 maxmΩ |
| Operating Junction Temperature | -55 to 175°C |
| Input Capacitance | 2856pF |
| Total Gate Charge @ Vgs=6V | 27nC |
| Total Gate Charge @ Vgs=10V | 42nC |
| Reverse Recovery Time | 65.5ns |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-DFN (5x6.15) |
| Moisture Sensitivity Level | 1 (Unlimited) |
| RoHS | ROHS3 Compliant |
| REACH | REACH Unaffected |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
