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Technical Specifications
Onsemi NTMS10P02R2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.8A |
| Current Rating | -10A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 3.64nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 14mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMS10P02R2 Datasheet
Download the complete datasheet for Onsemi NTMS10P02R2 to view detailed technical specifications.
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