The NTMS4706NR2 is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 830mW and a maximum current rating of 8.6A. The device is packaged in a SOIC-8 package and is not RoHS compliant. It has a drain to source breakdown voltage of 30V and a gate to source voltage of 20V. The transistor has a fall time of 4ns and a turn-off delay time of 24ns.
PackageSOIC
Current Rating8.6A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NTMS4706NR2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.4A |
| Current Rating | 8.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 950pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 12mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMS4706NR2 Datasheet
Download the complete datasheet for Onsemi NTMS4706NR2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
