The NTMS4706NR2 is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 830mW and a maximum current rating of 8.6A. The device is packaged in a SOIC-8 package and is not RoHS compliant. It has a drain to source breakdown voltage of 30V and a gate to source voltage of 20V. The transistor has a fall time of 4ns and a turn-off delay time of 24ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTMS4706NR2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTMS4706NR2 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.4A |
| Current Rating | 8.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 950pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 12mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTMS4706NR2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
