The NTMS4800NR2G is an N-channel junction field-effect transistor from Onsemi. It features a continuous drain current of 8A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 20mR and an input capacitance of 940pF. The NTMS4800NR2G is available in a lead-free SOIC-8 package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
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Onsemi NTMS4800NR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.4ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMS4800NR2G to view detailed technical specifications.
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