N-Channel Power MOSFET in SOIC package, featuring 30V drain-to-source breakdown voltage and 12A continuous drain current. Achieves low 9mΩ drain-to-source resistance at a nominal Vgs of 2.5V. Offers fast switching speeds with a 9.8ns fall time and 10.5ns turn-on delay. Maximum power dissipation is 2.1W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageSOIC
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Onsemi NTMS4801NR2G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
2.201nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Nominal Vgs
2.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
29ns
Turn-On Delay Time
10.5ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTMS4801NR2G Datasheet
Download the complete datasheet for Onsemi NTMS4801NR2G to view detailed technical specifications.
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