N-Channel Power MOSFET in SOIC package, featuring 30V drain-to-source breakdown voltage and 12A continuous drain current. Achieves low 9mΩ drain-to-source resistance at a nominal Vgs of 2.5V. Offers fast switching speeds with a 9.8ns fall time and 10.5ns turn-on delay. Maximum power dissipation is 2.1W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
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Onsemi NTMS4801NR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.201nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Nominal Vgs | 2.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 10.5ns |
| Width | 4mm |
| RoHS | Compliant |
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