N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 12.2A continuous drain current. Offers low 6.1mΩ drain-source resistance for efficient power handling. Packaged in a compact SOIC narrow body with a tape and reel configuration for automated assembly. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 6.5ns fall time.
PackageSOIC
PolarityN-CHANNEL
Power1.55W
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Technical Specifications
Onsemi NTMS4807NR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 860mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.55W |
| Radiation Hardening | No |
| Rds On Max | 6.1mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 14ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4807NR2G Datasheet
Download the complete datasheet for Onsemi NTMS4807NR2G to view detailed technical specifications.
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