Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 11.6A continuous drain current. Offers a low 9.0mΩ Rds On at 10V Vgs, with a maximum power dissipation of 1.3W. This SOIC-8 narrow body package component operates from -55°C to 150°C and includes fast switching characteristics with a 9.4ns turn-on delay and 15.6ns fall time. Packaged on a 2500-piece tape and reel, this RoHS compliant device is lead-free.
PackageSOIC
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Onsemi NTMS4916NR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Element Configuration | Single |
| Fall Time | 15.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.376nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9.4ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4916NR2G Datasheet
Download the complete datasheet for Onsemi NTMS4916NR2G to view detailed technical specifications.
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