The NTMS4935NR2G is a surface mount N-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 810mW and a continuous drain current of 10A. The device is packaged in a halogen-free and RoHS compliant SOIC-8 package and is suitable for use in a variety of applications. The transistor has a drain to source breakdown voltage of 30V and a drain to source resistance of 4.2mR. It is also RoHS compliant and lead free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.38W
Quick Jump:
Technical Specifications
Onsemi NTMS4935NR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 3.639nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 810mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.38W |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS4935NR2G Datasheet
Download the complete datasheet for Onsemi NTMS4935NR2G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
