The NTMS4937NR2G is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 30V and a continuous drain current of 8.6A. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant. The transistor has a maximum power dissipation of 810mW and a maximum drain to source resistance of 5.4mΩ. It is suitable for use in a variety of applications, including those requiring high current and low resistance.
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Onsemi NTMS4937NR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 38.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.563nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 810mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.36W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.8ns |
| Turn-On Delay Time | 12.3ns |
| RoHS | Compliant |
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