NTMS5835NLR2G

N-Channel MOSFET, 40V, 9.2A, 14mR, SOIC-8, Logic Level

N-Channel Power MOSFET in SOIC-8 narrow body package. Features 40V drain-to-source breakdown voltage and 10mΩ maximum drain-to-source resistance. Supports a continuous drain current of 9.2A and a gate-to-source voltage of 20V. Offers fast switching with a 9ns fall time, 15ns turn-on delay, and 22ns turn-off delay. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. RoHS compliant and lead-free.

PackageSOIC

PolarityN-CHANNEL

Power1.5W

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Technical Specifications

Onsemi NTMS5835NLR2G technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	9.2A
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	14mR
Drain to Source Voltage (Vdss)	40V
Element Configuration	Single
Fall Time	9ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	2.115nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.5W
Nominal Vgs	1.85V
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.5W
Radiation Hardening	No
Rds On Max	10mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	1.85V
Turn-Off Delay Time	22ns
Turn-On Delay Time	15ns
Width	4mm