N-Channel Power MOSFET, SOIC-8 package, featuring 40V drain-source breakdown voltage and 5.8A continuous drain current. Offers a low 20.5mΩ drain-source resistance at 10Vgs. Operates with a 4ns fall time and 11ns turn-on delay, with a 17ns turn-off delay. Maximum power dissipation is 1.5W, with an operating temperature range of -55°C to 150°C. Logic-level gate drive supported.
PackageSOIC
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTMS5838NLR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 20.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 785pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMS5838NLR2G Datasheet
Download the complete datasheet for Onsemi NTMS5838NLR2G to view detailed technical specifications.
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