The NTMSD2P102LR2 is a P-channel junction field-effect transistor from Onsemi. It has a continuous drain current rating of 2.3A and a drain to source breakdown voltage of -20V. The device is packaged in a SOIC-8 package and is rated for operation between -55°C and 150°C. The transistor has a maximum power dissipation of 710mW and a maximum drain to source resistance of 90mR. It is not RoHS compliant.
PackageSOIC
Current Rating-2.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTMSD2P102LR2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 750pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 90mR |
| RoHS Compliant | No |
| Series | FETKY™ |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMSD2P102LR2 Datasheet
Download the complete datasheet for Onsemi NTMSD2P102LR2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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