This single N-channel power MOSFET is rated for 150 V drain-to-source voltage and 174 A continuous drain current at a 25 °C case temperature. It is supplied in the TDFNW8 DUAL COOL package and specifies up to 4.45 mΩ drain-to-source on-resistance at 10 V gate drive. Typical gate charge is 79 nC, with 6514 pF input capacitance and 293 W power dissipation. The device operates over a -55 °C to +175 °C junction and storage temperature range and is Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NTMTSC4D3N15MC technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 150V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 174A |
| Continuous Drain Current (Ta=25°C) | 22A |
| Pulsed Drain Current | 900A |
| Power Dissipation | 293W |
| Drain-Source On-Resistance Max @ VGS=10V | 4.45mΩ |
| Drain-Source On-Resistance Max @ VGS=8V | 5mΩ |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Input Capacitance | 6514pF |
| Output Capacitance | 1750pF |
| Reverse Transfer Capacitance | 12.5pF |
| Total Gate Charge | 79nC |
| Reverse Recovery Time | 85ns |
| Reverse Recovery Charge | 194nC |
| Junction-to-Case Thermal Resistance | 0.5°C/W |
| Operating Junction and Storage Temperature Range | -55 to +175°C |
| RoHS | Compliant |
| Pb Free | Yes |
| Halogen Free/bfr Free | Yes |
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