The NTNS3190NZT5G is a single N-channel junction field-effect transistor with a maximum drain to source voltage of 20V and a continuous drain current of 224mA. It has a maximum power dissipation of 120mW and a maximum operating temperature of 150°C. The device is RoHS compliant and is available in a surface mount package with a tape and reel packaging option. The transistor has a low input capacitance of 15.8pF and a fast switching time with a fall time of 110ns and a turn-off delay time of 201ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTNS3190NZT5G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTNS3190NZT5G technical specifications.
| Continuous Drain Current (ID) | 224mA |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 110ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 15.8pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 201ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTNS3190NZT5G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
