Single N-Channel MOSFET, 20V Drain-to-Source Voltage (Vdss), 224mA Continuous Drain Current (ID), and 1.4Ω Drain-to-Source Resistance (Rds On Max). Features include 110ns fall time, 201ns turn-off delay, and 18ns turn-on delay. Input capacitance is 15.8pF. Operates from -55°C to 150°C with a maximum power dissipation of 120mW. Packaged in XLLGA3 (0.62x0.62, 0.35P) on an 8000-piece tape and reel. RoHS compliant and lead-free.
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Onsemi NTNS3193NZT5G technical specifications.
| Continuous Drain Current (ID) | 224mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 15.8pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 201ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
No datasheet is available for this part.
