The NTNS3A65PZT5G is a P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 281mA and a drain to source voltage of 20V. The device has a maximum power dissipation of 155mW and a drain to source resistance of 1.3R. It is packaged in a lead-free SOT-883 package and is RoHS compliant.
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Onsemi NTNS3A65PZT5G technical specifications.
| Package/Case | SOT-883 |
| Continuous Drain Current (ID) | 281mA |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 44pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 155mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 178ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTNS3A65PZT5G to view detailed technical specifications.
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