Single P-channel JFET with -20V Drain-Source Breakdown Voltage and -200mA continuous drain current. Features 3.5 Ohm Rds On Max and 150mA ID. Packaged in a compact SOT-1123-3 (0.85mm L x 0.65mm W x 0.4mm H) on 8000-piece tape and reel. Operating temperature range from -55°C to 150°C, with 125mW max power dissipation. Lead-free and RoHS compliant.
PackageSOT-1123-3
PolarityP-CHANNEL
Power-200mW
Quick Jump:
Technical Specifications
Onsemi NTNUS3171PZT5G technical specifications.
General
| Package/Case | SOT-1123-3 |
| Continuous Drain Current (ID) | 150mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.4mm |
| Input Capacitance | 13pF |
| Lead Free | Lead Free |
| Length | 0.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | -200mW |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 196ns |
| Turn-On Delay Time | 30ns |
| Width | 0.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTNUS3171PZT5G Datasheet
Download the complete datasheet for Onsemi NTNUS3171PZT5G to view detailed technical specifications.
No datasheet is available for this part.