The NTP082N65S3HF is a high-voltage N-channel power MOSFET belonging to onsemi's SUPERFET III family. It utilizes super-junction (SJ) technology and charge balance technology to achieve exceptionally low on-resistance and lower gate charge performance. As an FRFET (Fast Recovery MOSFET), it is optimized for superior reverse recovery performance of the body diode, which enhances system reliability and reduces the need for additional components. This device is specifically designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it ideal for power systems requiring miniaturization and high efficiency, such as telecom, servers, EV chargers, and solar power applications.
Temp Range-55 to 150°C
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Technical Specifications
Onsemi NTP082N65S3HF technical specifications.
General
| Drain-to-Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) @ 25°C | 40A |
| Drain-to-Source On-Resistance (Rds(on)) Max | 82mΩ |
| Gate-Source Voltage (Vgs) Max | ±30V |
| Total Gate Charge (Qg) @ 10V | 81nC |
| Power Dissipation (Pd) @ 25°C | 313W |
| Operating Temperature Range | -55 to 150°C |
| Input Capacitance (Ciss) @ 400V | 3410pF |
| Reverse Recovery Time (trr) | 119ns |
Compliance
| RoHS | RoHS3 Compliant |
| REACH | REACH Unaffected |
| Halogen Free | Yes |
Datasheet
Onsemi NTP082N65S3HF Datasheet
Download the complete datasheet for Onsemi NTP082N65S3HF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.