N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. Offers a low 81 mOhm drain-source resistance (Rds On Max) and 214W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this component operates from -55°C to 175°C. Includes a 2.9V threshold voltage and fast switching characteristics with a 24ns fall time.
PackageTO-220AB
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTP30N20G technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.335nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 81mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.9V |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTP30N20G Datasheet
Download the complete datasheet for Onsemi NTP30N20G to view detailed technical specifications.
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