The NTP5860NG is a single N-channel MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 220A. It has a drain to source resistance of 3mR and is packaged in a TO-220-3 flange mount package. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. It has a maximum power dissipation of 283W and a maximum operating temperature of 175°C.
PackageTO-220-3
PolarityN-CHANNEL
Power283W
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Technical Specifications
Onsemi NTP5860NG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 220A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 283W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 283W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTP5860NG Datasheet
Download the complete datasheet for Onsemi NTP5860NG to view detailed technical specifications.
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