The NTP5862NG is a single N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 60V and a continuous drain current of 98A. The device is packaged in a TO-220-3 flange mount package and is RoHS compliant. It has a power dissipation of 115W and a drain to source resistance of 5.7mR. The NTP5862NG has an input capacitance of 6nF and a gate to source voltage of 20V.
PackageTO-220-3
PolarityN-CHANNEL
Power115W
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Technical Specifications
Onsemi NTP5862NG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTP5862NG Datasheet
Download the complete datasheet for Onsemi NTP5862NG to view detailed technical specifications.
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