The NTP5863NG is a single N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 150W and a drain to source breakdown voltage of 60V. The device is packaged in a TO-220-3 case and is lead free and RoHS compliant. The MOSFET has an input capacitance of 3.2nF and a drain to source resistance of 7.8mR. It can handle a continuous drain current of 97A and has a fall time of 9ns and turn-off delay time of 25ns.
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Onsemi NTP5863NG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 97A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.8mR |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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