N-channel Power MOSFET featuring 60V drain-to-source breakdown voltage and 63A continuous drain current. Offers a low 12.4mΩ drain-to-source resistance. Packaged in a TO-220-3 configuration with a maximum power dissipation of 107W. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 4.6ns fall time.
Onsemi NTP5864NG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 63A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 12.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.82mm |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Radiation Hardening | No |
| Rds On Max | 12.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| Width | 15.75mm |
| RoHS | Compliant |
No datasheet is available for this part.
