Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 1.3A. Offers a maximum drain-source on-resistance of 220mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 400mW. Packaged in a SOT-23-3 (TO-236) configuration, supplied on a 3000-piece tape and reel. Includes a gate-to-source voltage rating of 12V and a threshold voltage of -1V.
PackageSOT-23-3
Current Rating-1.3A
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NTR1P02LT1G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.3A
Current Rating
-1.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
220MR
Element Configuration
Single
Fall Time
15ns
Gate to Source Voltage (Vgs)
12V
Height
0.94mm
Input Capacitance
225pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
400mW
Radiation Hardening
No
Rds On Max
220mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1V
Turn-Off Delay Time
18ns
Turn-On Delay Time
7ns
DC Rated Voltage
-20V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTR1P02LT1G Datasheet
Download the complete datasheet for Onsemi NTR1P02LT1G to view detailed technical specifications.
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