Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 1.3A. Offers a maximum drain-source on-resistance of 220mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 400mW. Packaged in a SOT-23-3 (TO-236) configuration, supplied on a 3000-piece tape and reel. Includes a gate-to-source voltage rating of 12V and a threshold voltage of -1V.
PackageSOT-23-3
Current Rating-1.3A
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NTR1P02LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.3A |
| Current Rating | -1.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 220MR |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.94mm |
| Input Capacitance | 225pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -20V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTR1P02LT1G Datasheet
Download the complete datasheet for Onsemi NTR1P02LT1G to view detailed technical specifications.
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