
Single P-Channel JFET, SOT-23-3 package, offering a -20V drain-to-source breakdown voltage and 1.3A continuous drain current. Features a maximum drain-source on-resistance of 220mΩ and a typical 135mΩ resistance. Operates with a nominal gate-to-source voltage of -1V, a threshold voltage of -1V, and a gate-to-source voltage up to 12V. Includes fast switching characteristics with a 7ns turn-on delay and 18ns turn-off delay. Maximum power dissipation is 400mW, with an operating temperature range of -55°C to 150°C. Packaged in tape and reel, this RoHS compliant component is lead-free.
Onsemi NTR1P02LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 135mR |
| Drain-source On Resistance-Max | 220MR |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.01mm |
| Input Capacitance | 225pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 7ns |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTR1P02LT3G to view detailed technical specifications.
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