
P-Channel MOSFET, single element configuration, designed for 20V drain-source voltage. Features 1A continuous drain current and a maximum on-resistance of 148mR. Packaged in a compact SOT-23-3, this component offers fast switching with turn-on delay of 7ns and fall time of 9ns. Operates within a temperature range of -55°C to 150°C, with 400mW power dissipation. RoHS compliant and lead-free.
Onsemi NTR1P02T1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 148mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 148MR |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.94mm |
| Input Capacitance | 165pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Nominal Vgs | -1.9V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.9V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -20V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTR1P02T1G to view detailed technical specifications.
No datasheet is available for this part.