The NTR2101PT1 is a P-channel JFET with a drain to source breakdown voltage of -8V and a continuous drain current of -3.7A. It features a maximum power dissipation of 960mW and an operating temperature range of -55°C to 150°C. The device is packaged in a SOT-23-3 surface mount package and is not RoHS compliant due to the presence of lead.
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Onsemi NTR2101PT1 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -3.7A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 79mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 15.75ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.173nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Rds On Max | 52mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | -8V |
| RoHS | Not Compliant |
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