P-Channel MOSFET, SOT-23-3 package, featuring a -8V Drain-Source Breakdown Voltage and 3.7A Continuous Drain Current. Offers a low Drain-Source On Resistance of 79mR at a 10V Vgs. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 960mW. Includes fast switching characteristics with a 7.4ns turn-on delay and 15.75ns fall time.
PackageSOT-23-3
Current Rating-3.7A
PolarityP-CHANNEL
Power960mW
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Technical Specifications
Onsemi NTR2101PT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 79mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 39MR |
| Element Configuration | Single |
| Fall Time | 15.75ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.01mm |
| Input Capacitance | 1.173nF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | -8V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTR2101PT1G Datasheet
Download the complete datasheet for Onsemi NTR2101PT1G to view detailed technical specifications.
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