The NTR3162PT1G is a P-channel junction field-effect transistor in a surface mount SOT-23-3 package. It has a maximum operating temperature range of -55°C to 150°C and is lead free. The device can handle a continuous drain current of up to 2.2A and a maximum power dissipation of 480mW. The transistor has a drain to source breakdown voltage of -20V and a drain to source resistance of 88mR. It also features an input capacitance of 940pF and a gate to source voltage of 8V.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Onsemi NTR3162PT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTR3162PT1G Datasheet
Download the complete datasheet for Onsemi NTR3162PT1G to view detailed technical specifications.
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