Single P-Channel Power MOSFET featuring a -20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 3A. This component offers a low Drain to Source Resistance (Rds On Max) of 38mR. It is housed in a compact SOT-23-3 package, ideal for space-constrained applications. The device operates within a temperature range of -55°C to 150°C and boasts RoHS and Halogen Free compliance. Key switching characteristics include a 100ns turn-on delay and a 552ns fall time.
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Onsemi NTR3A30PZT1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | -20V |
| Element Configuration | Single |
| Fall Time | 552ns |
| Gate to Source Voltage (Vgs) | 8V |
| Halogen Free | Halogen Free |
| Height | 1.11mm |
| Input Capacitance | 1.651nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -650mV |
| Turn-Off Delay Time | 1043ns |
| Turn-On Delay Time | 100ns |
| Weight | 0.050717oz |
| RoHS | Compliant |
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