Single N-Channel MOSFET in SOT-23-3 package. Features 30V drain-to-source breakdown voltage and 500mA continuous drain current. Offers a maximum drain-source on-resistance of 1.5 Ohms. Operates with a nominal gate-source voltage of 1.4V. Includes 21pF input capacitance and a maximum power dissipation of 830mW. Packaged on a 3000-piece tape and reel.
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Onsemi NTR4003NT1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1R |
| Drain-source On Resistance-Max | 1R |
| Element Configuration | Single |
| Fall Time | 47.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.01mm |
| Input Capacitance | 21pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Nominal Vgs | 1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 690mW |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 65.1ns |
| Turn-On Delay Time | 16.7ns |
| Width | 1.4mm |
| RoHS | Compliant |
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