Single N-Channel MOSFET in SOT-23-3 package. Features 30V drain-to-source breakdown voltage and 500mA continuous drain current. Offers a maximum drain-source on-resistance of 1.5 Ohms. Operates with a nominal gate-source voltage of 1.4V. Includes 21pF input capacitance and a maximum power dissipation of 830mW. Packaged on a 3000-piece tape and reel.
PackageSOT-23-3
PolarityN-CHANNEL
Power690mW
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Technical Specifications
Onsemi NTR4003NT1G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1R
Drain-source On Resistance-Max
1R
Element Configuration
Single
Fall Time
47.9ns
Gate to Source Voltage (Vgs)
20V
Height
1.01mm
Input Capacitance
21pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Nominal Vgs
1.4V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
690mW
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.4V
Turn-Off Delay Time
65.1ns
Turn-On Delay Time
16.7ns
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTR4003NT1G Datasheet
Download the complete datasheet for Onsemi NTR4003NT1G to view detailed technical specifications.
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