Single P-Channel Trench Power MOSFET featuring a -20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 3.2A. This device offers a low Drain-source On Resistance (Rds On) of 85mΩ at a Gate to Source Voltage (Vgs) of 8V. The SOT-23-3 package houses a single element configuration with a maximum power dissipation of 730mW. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageSOT-23-3
PolarityP-CHANNEL
Power730mW
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Technical Specifications
Onsemi NTR4101PT1G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.2A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
112mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
70MR
Element Configuration
Single
Fall Time
12.6ns
Gate to Source Voltage (Vgs)
8V
Height
0.94mm
Input Capacitance
675pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
730mW
Nominal Vgs
-720mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
730mW
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-720mV
Turn-Off Delay Time
30.2ns
Turn-On Delay Time
7.5ns
DC Rated Voltage
-20V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTR4101PT1G Datasheet
Download the complete datasheet for Onsemi NTR4101PT1G to view detailed technical specifications.
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