Single N-Channel Power MOSFET, SOT-23 package. Features 30V drain-to-source breakdown voltage and 2.4A continuous drain current. Offers a maximum drain-source on-resistance of 55mΩ. Operates with a nominal gate-to-source voltage of 1V and a threshold voltage of 1V. Includes a fall time of 3.5ns and turn-on delay time of 6.4ns. RoHS compliant with a maximum power dissipation of 780mW.
PackageSOT-23-3
PolarityN-CHANNEL
Power780mW
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Technical Specifications
Onsemi NTR4170NT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 55MR |
| Element Configuration | Single |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.01mm |
| Input Capacitance | 432pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480mW |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 780mW |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15.1ns |
| Turn-On Delay Time | 6.4ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTR4170NT1G Datasheet
Download the complete datasheet for Onsemi NTR4170NT1G to view detailed technical specifications.
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