
P-Channel MOSFET, 30V Vds, -3.5A continuous drain current, and 75mR max Rds On. Features a SOT-23-3 package, 1.25W power dissipation, and operates from -55°C to 150°C. Includes 9ns turn-on delay and 22ns fall time. RoHS compliant.
Onsemi NTR4171PT1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | -3.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 75MR |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.01mm |
| Input Capacitance | 720pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480mW |
| Nominal Vgs | -1.15V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.15V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9ns |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTR4171PT1G to view detailed technical specifications.
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