N-channel enhancement mode MOSFET, 20V drain-source breakdown voltage, 3.2A continuous drain current. Features 70mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.2V. Packaged in a compact SOT-23-3 surface-mount case, this single-element transistor offers a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. RoHS compliant and halogen-free.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 85mR |
| Drain-source On Resistance-Max | 70MR |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 6.5ns |
| DC Rated Voltage | 20V |
| Width | 1.3mm |
| RoHS | Compliant |
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