Single N-Channel Logic Level Power MOSFET featuring a 60V Drain-to-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This component offers a low Drain to Source Resistance (Rds On) of 142mΩ and a threshold voltage of 2.5V. Designed for logic-level gate drive with a 20V Gate to Source Voltage (Vgs) capability, it boasts fast switching characteristics with a 5ns turn-on delay and 2ns fall time. Encased in a compact SOT-23-3 (TO-236) package, this RoHS compliant device operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W.
Onsemi NTR5198NLT1G technical specifications.
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