Single N-Channel Logic Level Power MOSFET featuring a 60V Drain-to-Source Voltage (Vdss) and 2.2A Continuous Drain Current (ID). This component offers a low Drain to Source Resistance (Rds On) of 142mΩ and a threshold voltage of 2.5V. Designed for logic-level gate drive with a 20V Gate to Source Voltage (Vgs) capability, it boasts fast switching characteristics with a 5ns turn-on delay and 2ns fall time. Encased in a compact SOT-23-3 (TO-236) package, this RoHS compliant device operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W.
PackageSOT-23-3
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTR5198NLT1G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.2A
Drain to Source Resistance
142mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
2ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1.01mm
Input Capacitance
182pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
155mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.5V
Turn-Off Delay Time
13ns
Turn-On Delay Time
5ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTR5198NLT1G Datasheet
Download the complete datasheet for Onsemi NTR5198NLT1G to view detailed technical specifications.
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