Single P-Channel Trench Power MOSFET featuring a -20V Drain to Source Voltage (Vdss) and 3.2A Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 70mR at 10V, 4.5V. This device is housed in a compact SOT-23-3 package, ideal for space-constrained applications. Key electrical characteristics include a 7.5ns Turn-On Delay Time and 21ns Fall Time, with a maximum power dissipation of 420mW. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Onsemi NTRV4101PT1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.01mm |
| Input Capacitance | 675pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30.2ns |
| Turn-On Delay Time | 7.5ns |
| Width | 1.4mm |
| RoHS | Compliant |
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