The NTS2101PT1 is a single P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1.4A and a drain to source breakdown voltage of -8V. The transistor is packaged in a SOT-323-3 package and is rated for a maximum power dissipation of 290mW. It is not RoHS compliant and contains lead.
PackageSOT-323-3
Current Rating-1.4A
PolarityP-CHANNEL
Power290mW
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Technical Specifications
Onsemi NTS2101PT1 technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | -1.4A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 117mR |
| Drain to Source Voltage (Vdss) | 8V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 640pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 290mW |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 26ns |
| DC Rated Voltage | -8V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTS2101PT1 Datasheet
Download the complete datasheet for Onsemi NTS2101PT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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