P-channel, single JFET with a -8V drain-source breakdown voltage and a maximum continuous drain current of 1.4A. Features a low drain-source on-resistance of 65mΩ (max) and 100mΩ (typical). Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 290mW. Packaged in a compact SOT-323-3 (SC-70) surface-mount case, ideal for space-constrained applications.
PackageSOT-323-3
Current Rating-1.4A
PolarityP-CHANNEL
Power290mW
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Technical Specifications
Onsemi NTS2101PT1G technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | -1.4A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 117mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 65MR |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.9mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Nominal Vgs | -700mV |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 290mW |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6.2ns |
| DC Rated Voltage | -8V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTS2101PT1G Datasheet
Download the complete datasheet for Onsemi NTS2101PT1G to view detailed technical specifications.
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