N-Channel MOSFET, single element, 30V drain-source breakdown voltage, 270mA continuous drain current, and 1 Ohm maximum drain-source on-resistance. Features a 1.2V nominal gate-source threshold voltage and 23ns fall time. Packaged in a 3-pin SC-70 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 330mW.
PackageSC
Current Rating270mA
PolarityN-CHANNEL
Power330mW
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Technical Specifications
Onsemi NTS4001NT1G technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 270mA |
| Current Rating | 270mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.5R |
| Drain-source On Resistance-Max | 1R |
| Element Configuration | Single |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 33pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Nominal Vgs | 1.2V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 30V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTS4001NT1G Datasheet
Download the complete datasheet for Onsemi NTS4001NT1G to view detailed technical specifications.
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