
Single N-Channel MOSFET, SOT-323 package, featuring 25V drain-source breakdown voltage and 700mA continuous drain current. Offers a low drain-source on-resistance of 350mΩ. Includes ESD protection and operates within a temperature range of -55°C to 150°C. This component boasts a turn-on delay of 5ns and a fall time of 8.2ns.
Onsemi NTS4409NT1G technical specifications.
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 700mA |
| Current Rating | 700mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 249MR |
| Element Configuration | Single |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.9mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 280mW |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 650mV |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 25V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTS4409NT1G to view detailed technical specifications.
No datasheet is available for this part.
