The NTTD1P02R2G is a P-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 500mW and a drain to source breakdown voltage of -20V. The device is lead free and RoHS compliant, packaged in a tape and reel format with 4000 units per reel. It features a small outline R-PDSO-G8 package and has a maximum input capacitance of 265pF.
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Onsemi NTTD1P02R2G technical specifications.
| Continuous Drain Current (ID) | 1.45A |
| Current Rating | -1.45A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 265pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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